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CY4748 Germanium Phosphide Crystal (GeP)

Catalog No. CY4748
Material Germanium Phosphide Crystal (GeP)
Purity >99.99%
Crystal Structure monoclinic
Unit Cell Parameters a= 0.386nm, b= 0.444nm, c= 0.785nm, α= β= γ= 90°

Germanium Phosphide Crystal (GeP) has a zinc blende crystal structure that is similar to gallium arsenide (GaAs). Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality Optical Products.

Related products: ZnGeP2 (ZGP) Crystal, Germanium Crystal Sheet (Ge Crystal Sheet), Germanium Wafer (Ge Wafer)

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Description
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Germanium Phosphide Crystal (GeP) Description

Germanium Phosphide Crystal (GeP) is a semiconductor material used in electronic and optoelectronic industries. It has anisotropic dispersions of band structures similar to GaTe monoclinic structure. The direct bandgap is around 0.8eV which makes GeP crystal suitable for applications in the infrared spectral range.

Germanium Phosphide Crystal (GeP) Specifications

Material

Germanium Phosphide Crystal (GeP)

Purity

>99.99%

Crystal Structure

Monoclinic

Unit Cell Parameters

a= 0.386nm, b= 0.444nm, c= 0.785nm,

α= β= γ= 90°

Crystal size

~3 mm

 

Germanium Phosphide Crystal (GeP) Applications

  • As a substrate in Optoelectronics to grow gallium arsenide or indium gallium arsenide films.
  • Making multijunction solar cells.
  • Fabricating waveguides for optical applications.
  • Making IR detectors.

Germanium Phosphide Crystal (GeP) Packaging

Our Germanium Phosphide Crystal (GeP) is carefully handled during storage and transportation to preserve the quality of our product in its original condition.

 

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