Silicon Wafer is a thin, flat disc made from high-purity silicon, typically used in the semiconductor industry for the fabrication of microchips and integrated circuits. Stanford Advanced Materials (SAM) is a reliable global supplier of high-quality Silicon Wafers, ensuring precise specifications and consistent performance for diverse technological needs. Related products: Gallium Nitride Wafer, Sapphire Wafer, Silicon Carbide Wafer

Polycrystalline Silicon Wafer is composed of multiple crystal structures that form randomly during the cooling process. Stanford Advanced Materials (SAM) is committed to the research and development and production of mid-wave infrared (MWIR) and long-wave infrared (LWIR) optical systems. Related products: Silicon Wafer, SOI Wafer, Silicon Thermal Oxide Wafer, Silicon Window (Si)

SAM is a global manufacturer of Silicon Carbide Wafer. With our rich experience and knowledge in the wafer industry, you can be confident in making SAM your first choice. Related products: Gallium Arsenide Wafer, Gallium Nitride Wafer, Sapphire Wafer, Silicon Wafer, Germanium Wafer (Ge wafer).

Cu Coated Ta/SiO2 Silicon Wafer can be used in the nano field, scanning electron microscopy (SEM), atomic force microscopy (AFM), and other scanning probe microscope ranging. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality Optical Products. Related products: Ti coated SiO2/Si Substrate, Ni Coated SiO2/Si Substrate, Gold-plated Silicon Wafer, Pt-plated Silicon Wafer, Ag-plated Silicon Wafer

Silicon Carbide Wafer Boat is a ceramic support structure used in high-temperature semiconductor processing. Developed by Stanford Advanced Materials (SAM), it is fabricated using high-purity SiC and undergoes precise sintering and optical inspection to verify dimensional accuracy. These measures ensure controlled density and purity that support consistent thermal behavior. SAM applies systematic quality control protocols to monitor material integrity throughout production.

SAM provides Silicon Thermal Oxide Wafer in diameter from 2" to 12", we always choose prime grade and a defect-free silicon wafer as the substrate for growing high uniformity thermal oxide layer to meet your specific requirements. Related Products: Indium Antimonide Wafer, Silicon Carbide Wafer, Gallium Phosphide Wafer, Silicon Wafer, 1851 Germanium Wafer (Ge wafer).

Aluminum (Al) Coated Silicon Wafer is a silicon substrate with an aluminum vapor deposit that enhances its surface properties for semiconductor processing. Stanford Advanced Materials (SAM) applies advanced sputtering techniques and precise thickness measurement methods during deposition. The process includes in-line optical inspections and dimensional verification to ensure consistent layer uniformity and minimal surface defects, which are crucial for high-precision device fabrication.

Iridium (Ir) Coated Silicon Wafer is a silicon substrate featuring a thin iridium film applied through controlled deposition. Stanford Advanced Materials (SAM) employs sputter deposition and SEM surface mapping for quality screening, precisely monitoring film thickness and uniformity. This method minimizes oxidation and contamination risks during high-temperature processes. SAM's technical framework ensures that each wafer meets strict fabrication specifications for semiconductor research and process development.

Palladium (Pd) Coated Silicon Wafer is engineered with a thin palladium layer sputter-deposited on a silicon substrate to address specific challenges in semiconductor processes. Stanford Advanced Materials (SAM) employs precise deposition techniques and in-line surface quality inspections using advanced metrology tools. This approach minimizes surface defects and ensures uniformity, providing an effective interface for subsequent processing steps while maintaining strict process controls.

Silicon Carbide Wafer Boat Holder is engineered from high-purity SiC, formulated with a customizable design to support specific processing requirements. Stanford Advanced Materials (SAM) employs advanced sintering techniques and microscopic surface evaluation to verify material uniformity and minimize defect occurrence. This rigorous inspection process is integral to achieving precise dimensional control, helping maintain consistent performance in high-temperature applications and semiconductor device fabrication.